Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM

Resistive switching memory (RRAM) offers fast switching, high endurance and low power operation. RRAM is therefore targeted as a high-density technology for post 3D Flash. High-density application, however, requires operation at low current below 10 μA, which is prone to program variability and random telegraph noise (RTN). This work presents a physics-based model for RTN in RRAM, based on trap-induced depletion of the conductive filament (CF). Voltage-dependent RTN is described by localized Joule heating, as supported by RTN experiments at variable temperature.