• DocumentCode
    187676
  • Title

    Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM

  • Author

    Balatti, S. ; Ambrogio, Stefano ; Cubeta, A. ; Calderoni, Alessandro ; Ramaswamy, Nirmal ; Ielmini, Daniele

  • Author_Institution
    DEIB, Politec. di Milano, Milan, Italy
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    Resistive switching memory (RRAM) offers fast switching, high endurance and low power operation. RRAM is therefore targeted as a high-density technology for post 3D Flash. High-density application, however, requires operation at low current below 10 μA, which is prone to program variability and random telegraph noise (RTN). This work presents a physics-based model for RTN in RRAM, based on trap-induced depletion of the conductive filament (CF). Voltage-dependent RTN is described by localized Joule heating, as supported by RTN experiments at variable temperature.
  • Keywords
    flash memories; hafnium compounds; random noise; random-access storage; 3D flash memory; HfOx; RTN; conductive filament; fast switching; resistive RAM; resistive switching memory; voltage dependent random telegraph noise; Electric potential; Hafnium compounds; Heating; Integrated circuits; Resistance; Switches; Temperature measurement; Resistive switching memory (RRAM); current fluctuation; random telegraph noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6861159
  • Filename
    6861159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=187676