Title :
Characterization of an advanced HEED (High Efficiency Electron-emission Device)
Author :
Negishi, N. ; Nakada, T. ; Sakemura, K. ; Okuda, Y. ; Satoh, H. ; Watanabe, A. ; Yoshikawa, T. ; Ogasawara, K. ; Koshida, N.
Author_Institution :
Corporate R&D Labs., Pioneer Corp., Saitama, Japan
Abstract :
We recently developed a new-type cold cathode termed HEED (High-Efficiency Electron-emission Device) based on the Metal-Insulator-Semiconductor (MIS) diode. It has been shown that by arranging the device and surface structures the emission characteristics can be significantly improved. Using the advanced HEED as an excitation source, a 4-inch prototype flat panel display has been fabricated on a glass substrate. The panel operates well with a practical brightness at a relatively low driving voltage. The occasional reactivation technique is very effective to prolong the operation life of this device.
Keywords :
MIS devices; brightness; electron field emission; flat panel displays; semiconductor diodes; 4 inch; High Efficiency Electron-emission Device; Metal-Insulator-Semiconductor diode; brightness; cold cathode; driving voltage; excitation source; flat panel display; glass substrate; operation life; reactivation technique; surface structures; Brightness; Current density; Current measurement; Diodes; Electrical resistance measurement; Electrodes; Electron emission; Flat panel displays; Prototypes; Voltage;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1355017
