DocumentCode
187688
Title
New circuit model for investigating plasma damage in FDSOI devices
Author
Akbal, Madjid ; Ribes, G. ; Poiroux, T. ; Carrere, J.-P. ; Vallier, L.
Author_Institution
STMicroelectron., Crolles, France
fYear
2014
fDate
1-5 June 2014
Abstract
In this work we propose a circuit model to investigate the plasma induced damage on the FDSOI technology. The charging damages are simulated on nMOS and pMOS devices as a function of the plasma parameters and antenna characteristics. We demonstrate that model simulations reproduce the electrical measurements and the FDSOI device behavior for each test structures where different configuration of diode protection and several gate oxide thicknesses are proposed.
Keywords
MIS devices; plasma devices; semiconductor diodes; silicon-on-insulator; FDSOI devices; FDSOI technology; Si; antenna characteristics; circuit model; diode protection; electrical measurements; gate oxide thickness; nMOS devices; pMOS devices; plasma induced damage; plasma parameters; Antennas; Integrated circuit modeling; Logic gates; MOS devices; Mathematical model; Plasmas; Threshold voltage; FDSOI devices; High-k; charging; plasma induced damage; threshold voltage shift;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6861165
Filename
6861165
Link To Document