DocumentCode
1876917
Title
Development of a MEMS-based gate to enhance cold-cathode electron field emission for space applications
Author
Goldberg, H.R. ; Encarnacion, P.A. ; Gilchrist, B.E. ; Clarke, R. ; Morris, D.P. ; Van Noord, J.L.
fYear
2004
fDate
16-16 July 2004
Firstpage
288
Lastpage
289
Abstract
A gated structure of arrays of micron-sized holes has been developed at the University of Michigan. The structure can be positioned atop any uniformly structured planar emitting surface and biased to effect electron emission. The structure is designed to be compatible with a variety of emission surface technologies such as thin films (e.g., boron nitride), carbon nanotubes, and self-assembled nanostructures.
Keywords
Application software; Boron; Dielectrics; Electron emission; Etching; Fabrication; Nanostructures; Plasmas; Silicon; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2004.1355019
Filename
1355019
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