DocumentCode
1877013
Title
Interleaved angled MMI CWDM structure on the SOI platform
Author
Hu, Ya ; Gardes, Frederic Y. ; Thomson, David J. ; Mashanovich, Goran Z. ; Reed, Graham T.
Author_Institution
Optoelectron. Res. Centre, Univ. of Southampton, Southampton, UK
fYear
2013
fDate
28-30 Aug. 2013
Firstpage
21
Lastpage
22
Abstract
We have demonstrated a low-insertion-loss 8-channel interleaved angled MMI CWDM structure on the SOI platform. It requires only a single-step lithography and etching for fabrication and has good tolerance to fabrication errors.
Keywords
etching; integrated optoelectronics; multiplexing equipment; optical communication equipment; optical fabrication; optical losses; photolithography; silicon-on-insulator; wavelength division multiplexing; SOI platform; Si; coarse wavelength division multiplexer; etching; fabrication errors; fabrication tolerance; lithography; low-insertion-loss 8-channel interleaved angled MMI CWDM structure; Arrayed waveguide gratings; Channel spacing; Etching; Fabrication; Insertion loss; Lithography; Sensitivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location
Seoul
ISSN
1949-2081
Print_ISBN
978-1-4673-5803-3
Type
conf
DOI
10.1109/Group4.2013.6644470
Filename
6644470
Link To Document