Title :
Suppression of spontaneous emission for two-dimensional GaAs photonic crystal microcavities
Author :
Sondergaard, T. ; Broeng, J. ; Bjarklev, A.
Author_Institution :
Dept. of Electromagn. Syst., Tech. Univ., Lyngby, Denmark
Abstract :
Summary form only given. Spontaneous emission represents a loss mechanism that fundamentally limits the performance of semiconductor lasers. The rate of spontaneous emission may, however, be controlled by a new class of periodic dielectric structures known as photonic crystals. Although a three-dimensional periodic structure may rigorously forbid spontaneous emission within a frequency interval, a simpler-to-fabricate two-dimensional (2-D) periodic structure may also introduce a large suppression of spontaneous emission.
Keywords :
III-V semiconductors; gallium arsenide; microcavity lasers; photonic band gap; semiconductor lasers; spontaneous emission; 3D periodic structure; GaAs; frequency interval; loss mechanism; periodic dielectric structures; photonic crystals; semiconductor laser performance limitations; simpler-to-fabricate 2D periodic structure; spontaneous emission; spontaneous emission rate; spontaneous emission suppression; two-dimensional GaAs photonic crystal microcavities; Dielectrics; Frequency; Gallium arsenide; Optical control; Optical losses; Performance loss; Periodic structures; Photonic crystals; Semiconductor lasers; Spontaneous emission;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834543