DocumentCode :
1877068
Title :
Simulation study of parameter influence on Dynamic Voltage Rise Control
Author :
Li, Ming ; Fang, Xiong ; Wang, Yue ; Zhang, Leqiang ; Wang, Ke ; Zhao, Guopeng
Author_Institution :
Sch. of Electr. Eng., Xi´´an Jiaotong Univ., Xi´´an, China
fYear :
2010
fDate :
21-25 Feb. 2010
Firstpage :
1745
Lastpage :
1748
Abstract :
High power IGBTs are widely used in wind power generation systems. An advanced IGBT gate driver with Dynamic Voltage Rise Control (DVRC) is used to suppress the turn-off over-voltage of the IGBT. Mass simulations are done to evaluate the performance, showing influence of the DVRC parameters, in order to select the right parameters for applications.
Keywords :
insulated gate bipolar transistors; power convertors; short-circuit currents; voltage control; DVRC; IGBT gate driver; dynamic voltage rise control; high power IGBT converter; short-circuit; turn-off over-voltage; wind power generation systems; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
Conference_Location :
Palm Springs, CA
ISSN :
1048-2334
Print_ISBN :
978-1-4244-4782-4
Electronic_ISBN :
1048-2334
Type :
conf
DOI :
10.1109/APEC.2010.5433469
Filename :
5433469
Link To Document :
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