A stability-ensuring procedure for designing high conversion-gain frequency doublers

Author

Schmale, I. ; Kompa, G.

Author_Institution

Fachgebiet Hochfrequenztech., Kassel Univ., Germany

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

873

Abstract

This paper presents a new general procedure for designing optimum conversion gain class B FET frequency doublers. For the first time, the two key design variables, i.e. the reflection coefficients of the input and output matching networks, /spl Gamma//sub IMN,2fo/ and /spl Gamma//sub OMN,fo/, can be independently swept without risking device oscillation and hence simulator nonconvergence. This permits the designer to directly select the best parameters for maximum but insensitive conversion gain. Exemplary conversion gain contours typical for HEMTs and MESFETs are finally presented.

Keywords

HEMT circuits; MESFET circuits; UHF frequency convertors; circuit optimisation; circuit stability; frequency multipliers; microwave frequency convertors; millimetre wave frequency convertors; nonlinear network synthesis; HEMTs; MESFETs; class B FET frequency doublers; design variables; high conversion-gain doublers; input matching network; optimum frequency doublers; output matching network; reflection coefficients; stability-ensuring procedure; Convergence; Design optimization; FETs; Frequency conversion; HEMTs; Impedance matching; MESFETs; MODFETs; Reflection; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705129

Filename

705129