Photoluminescence from a VCSEL structure a-SiN/sub x/:H microcavity

Author

Serpenguzel, Ali ; Darici, Y.

Author_Institution

Dept. of Phys., Bilkent Univ., Ankara, Turkey

fYear

1999

fDate

28-28 May 1999

Firstpage

527

Lastpage

528

Abstract

Summary form only given. Microcavity effects on the photoluminescence (PL) of porous Si has already been reported. Recently, we have observed visible and near infrared (IR) PL from hydrogenated amorphous Si nitride (a-SiNx:H) grown by low temperature PECVD. We have also reported the enhancement and inhibition of PL in an a-SiNx:H microcavity formed with metallic mirrors. The a-SiNx:H used in the microcavity was grown both with and without ammonia (NH/sub 3/). For the Si rich a-SiNx:H grown without NH/sub 3/, the PL is in the red-near IR. For the N rich a-SiNx:H grown with NH/sub 3/, the PL is in the blue-green. In this paper, we report on the bright and spectrally pure PL of a-SiNx:H in a VCSEL structure microcavity.

Keywords

amorphous state; hydrogen; microcavity lasers; photoluminescence; plasma CVD coatings; silicon compounds; surface emitting lasers; PECVD; SiN:H; VCSEL; a-SiN/sub x/:H microcavity; hydrogenated amorphous silicon nitride; low temperature growth; metallic mirror; photoluminescence; Laser transitions; Microcavities; Photoluminescence; Quantum dot lasers; Radiative recombination; Spontaneous emission; Stationary state; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834546

Filename

834546