Title :
SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts
Author :
Gasiot, Gilles ; Soussan, Dimitri ; Glorieux, M. ; Bottoni, C. ; Roche, Philippe
Author_Institution :
Design Enablement Service, STMicroelectron., Crolles, France
Abstract :
This work presents alpha and neutron SER characterizations of a 28nm commercial Fully-Depleted SOI technology predisposed to consumer applications. Its intrinsic SER hardness is as well compared to known highly reliable Partially-Depleted SOI technologies.
Keywords :
SRAM chips; neutron effects; radiation hardening (electronics); silicon-on-insulator; BULK; PDSOI; SER-SEL performances; SRAMs; UTBB FDSOI; alpha SER characterizations; fully-depleted SOI technology; intrinsic SER hardness; neutron SER characterizations; reliable partially-depleted SOI technology; ultra-thin body and BOX; CMOS integrated circuits; Neutrons; Random access memory; Reliability; Silicon; Silicon-on-insulator; Transistors; Fully Depleted SOI; SER; Soft Error Rate; UTBB;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861178
