Similarity and difference in temperature dependent recovery of HCS and NBTI

We investigated the temperature dependence of recovery behavior in p-channel MOSFETs after subjected to hot carrier stress (HCS) and negative bias temperature stress (NBTS) from the recovery activation energy distributions of threshold voltage shifts (E_r^V) and of interface states (E_r^D). Both E_r^V and E_r^D are composed of the two elements, so-called recoverable- and permanent components (R and P). We found that the temperature dependent recovery after HCS and NBTS can be interpreted by R and P. In addition, the degradation mechanism, i.e., origins of R and P, was discussed. This study sheds light on the high temperature degradation mechanism.