Title :
Crystallization of patterned amorphous si and ge thin films for 3D integrated optoelectronics
Author :
Hui Zhong ; Abu-Safe, Husam ; Hickerson, Alan ; Conley, Benjamin R. ; Naseem, Hameed ; Shui-Qing Yu
Author_Institution :
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
Selective area patterning and crystallizing a-Si and a-Ge films have resulted in single crystal films which can potentially work as micro templates on arbitrary substrates for subsequent epitaxy growth.
Keywords :
amorphous semiconductors; crystallisation; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; optical films; optical materials; semiconductor thin films; silicon; 3D integrated optoelectronics; Ge; Si; crystallization; epitaxial growth; microtemplates; patterned amorphous thin films; selective area patterning; single crystal films; Crystallization; Epitaxial growth; Photonics; Silicon; Substrates; amorphous semiconductors; crystallography; integrated optoelectronics;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644478
