Lift-off and rapid processing of 10 /spl mu/m thick single-crystal LiNbO/sub 3/ films

Summary form only given. The recent development of a novel crystal ion slicing technique (CIS) has made it possible to obtain high-quality single-crystal LiNbO/sub 3/ micron-thick films for heterogeneous integration of optical systems. These films can be integrated onto planar substrates based on technologically important materials systems [e.g. semiconductor] otherwise incompatible with single-crystal LiNbO/sub 3/. The technique employs the formation and subsequent preferential etching of a buried damage sacrificial layer obtained by implanting energetic He/sup +/. We report on a technique for rapid fabrication of the single-crystal LiNbO/sub 3/ films and the second harmonic generation (SHG) in the freestanding films. A bulk LiNbO/sub 3/ crystal phase-matched (PM) for SHG at 1.55 /spl mu/m is cut from a z-poled single crystal.