Energy-driven Hot-Carrier model in advanced nodes

With technology scaling, highly integrated devices have become increasingly sensitive to the slightest parameter drift. One of the main causes of parameter degradation in recent technologies is the Hot Carrier Injections (HCI), a progressive wear out phenomenon whose understanding and modeling has become mandatory in new CMOS nodes. Therefore, we present in this paper an experimental analysis of HCI degradation for fully depleted Silicon On Insulator (FDSOI) MOSFETs. The carrier energy and bulk bias dependencies are modeled according to our recent findings through a simple HC model based on physical theories applied to the specificity of FDSOI technology with body bias operation.