DocumentCode
187737
Title
A new efficient method for characterizing time constants of switching oxide traps
Author
Shaofeng Guo ; Pengpeng Ren ; Runsheng Wang ; Zhuoqing Yu ; Mulong Luo ; Xing Zhang ; Ru Huang
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2014
fDate
1-5 June 2014
Abstract
In this paper, a new method named Incremental Trap-Response (ITR) is proposed for characterizing the time constants of switching oxide traps, which can be used to expand the voltage detectable window of RTN. Both theoretical and experimental results demonstrate that the new ITR method has higher accuracy and is more time-efficient than recently proposed Statistical Trap-Response (STR) method, thus is helpful for trap-related research on both reliability and variability.
Keywords
MOSFET; Monte Carlo methods; high-k dielectric thin films; ITR method; MOSFETs; Monte-Carlo simulations; STR method; incremental trap-response method; planar high-κ-metal-gate NFETs; reliability; statistical trap-response method; switching oxide traps; time constant characterization; trap-related research; voltage detectable window; Accuracy; Electron traps; Fitting; Integrated circuit reliability; Logic gates; Switches; MC simulation; MOSFETs; characterizing method; switching oxide traps; time constants;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6861191
Filename
6861191
Link To Document