DocumentCode :
187737
Title :
A new efficient method for characterizing time constants of switching oxide traps
Author :
Shaofeng Guo ; Pengpeng Ren ; Runsheng Wang ; Zhuoqing Yu ; Mulong Luo ; Xing Zhang ; Ru Huang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2014
fDate :
1-5 June 2014
Abstract :
In this paper, a new method named Incremental Trap-Response (ITR) is proposed for characterizing the time constants of switching oxide traps, which can be used to expand the voltage detectable window of RTN. Both theoretical and experimental results demonstrate that the new ITR method has higher accuracy and is more time-efficient than recently proposed Statistical Trap-Response (STR) method, thus is helpful for trap-related research on both reliability and variability.
Keywords :
MOSFET; Monte Carlo methods; high-k dielectric thin films; ITR method; MOSFETs; Monte-Carlo simulations; STR method; incremental trap-response method; planar high-κ-metal-gate NFETs; reliability; statistical trap-response method; switching oxide traps; time constant characterization; trap-related research; voltage detectable window; Accuracy; Electron traps; Fitting; Integrated circuit reliability; Logic gates; Switches; MC simulation; MOSFETs; characterizing method; switching oxide traps; time constants;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
Type :
conf
DOI :
10.1109/IRPS.2014.6861191
Filename :
6861191
Link To Document :
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