Title :
Hot-carrier induced dielectric breakdown (HCIDB) challenges of a new high performance LDMOS generation
Author :
Schlunder, Christian ; Heinrigs, Wolfgang ; Landgraf, Erhard ; Aresu, Stefano ; Feick, Henning ; Rohner, M. ; Gustin, Wolfgang ; Dahl, Claus
Author_Institution :
Corp. Reliability Dept., Infineon Technol. AG, Neubiberg, Germany
Abstract :
A new generation of embedded-power technologies offering high performance LDMOSFETs was introduced and particularly the reliability of the devices were characterized. The combination of a 120nm logic process with LDMOS with thin gate oxide enables high efficiency power converters on small die sizes. The reliability of the new LDMOS transistors had to be optimized very accurately to achieve both reliable products and the new RON benchmark.
Keywords :
MOSFET; electric breakdown; hot carriers; semiconductor device reliability; HCIDB challenge; LDMOS transistor reliability; RON benchmark; device reliability; embedded-power technology; high-efficiency power converters; high-performance LDMOS generation; high-performance LDMOSFET; hot-carrier induced dielectric breakdown challenge; logic process; size 120 nm; thin-gate oxide; Degradation; Electric breakdown; Hot carriers; Integrated circuit reliability; Logic gates; Transistors;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861192
