Hot-carrier induced dielectric breakdown (HCIDB) challenges of a new high performance LDMOS generation

Author

Schlunder, Christian ; Heinrigs, Wolfgang ; Landgraf, Erhard ; Aresu, Stefano ; Feick, Henning ; Rohner, M. ; Gustin, Wolfgang ; Dahl, Claus

Author_Institution

Corp. Reliability Dept., Infineon Technol. AG, Neubiberg, Germany

fYear

2014

fDate

1-5 June 2014

Abstract

A new generation of embedded-power technologies offering high performance LDMOSFETs was introduced and particularly the reliability of the devices were characterized. The combination of a 120nm logic process with LDMOS with thin gate oxide enables high efficiency power converters on small die sizes. The reliability of the new LDMOS transistors had to be optimized very accurately to achieve both reliable products and the new RON benchmark.

Keywords

MOSFET; electric breakdown; hot carriers; semiconductor device reliability; HCIDB challenge; LDMOS transistor reliability; RON benchmark; device reliability; embedded-power technology; high-efficiency power converters; high-performance LDMOS generation; high-performance LDMOSFET; hot-carrier induced dielectric breakdown challenge; logic process; size 120 nm; thin-gate oxide; Degradation; Electric breakdown; Hot carriers; Integrated circuit reliability; Logic gates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861192

Filename

6861192