DocumentCode :
1877397
Title :
Free-carrier density dependent relaxation lifetime in Si quantum dot optical absorption modulator
Author :
Chung-Lun Wu ; Sheng-Pin Su ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2013
fDate :
28-30 Aug. 2013
Firstpage :
47
Lastpage :
48
Abstract :
A 4-nm large Si-QD doped SiOx rib waveguide based optical absorption modulator with free-carrier density dependent relaxation lifetime is demonstrated. The switching response is shortened to 9 μs by reducing pumping duty-cycle to 0.5 μs.
Keywords :
carrier density; carrier relaxation time; elemental semiconductors; light absorption; nanophotonics; optical modulation; optical pumping; optical switches; optical waveguides; rib waveguides; semiconductor quantum dots; silicon; silicon compounds; SiO:Si; free-carrier density dependent relaxation lifetime; pumping duty-cycle; quantum dot optical absorption modulator; rib waveguide; size 4 nm; switching response; time 0.5 mus; time 9 mus; Absorption; Generators; Laser excitation; Modulation; Optical waveguides; Probes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
ISSN :
1949-2081
Print_ISBN :
978-1-4673-5803-3
Type :
conf
DOI :
10.1109/Group4.2013.6644486
Filename :
6644486
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1877397
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