Photoluminescence and Raman characterization of excessive plasma etch damage of silicon

Author

Shiu-Ko Jang Jian ; Chih-Cherng Jeng ; Ting-Chun Wang ; Chih-Mu Huang ; Ying-Lang Wang ; Nishigaki, Hiroshi ; Hasuike, Noriyuki ; Harima, Hiroshi ; Woo Sik Yoo

Author_Institution

Taiwan Semicond. Manuf. Co., Ltd., Tainan, Taiwan

fYear

2013

fDate

6-7 June 2013

Firstpage

37

Lastpage

40

Abstract

Plasma processes have long been used in various stages of semiconductor device fabrication. Plasma enhanced chemical vapor deposition (PECVD) has been widely used as a low temperature silicon dioxide film deposition method in the semiconductor industry. [1,2] Various modes of plasma etching techniques also have been playing major roles in the silicon industry. Physical vapor deposition (PVD or sputtering), ion implantation, plasma ashing and plasma doping (PD) are a few examples of widely adapted plasma process techniques.

Keywords

Raman spectra; elemental semiconductors; photoluminescence; plasma CVD; silicon; silicon compounds; sputter deposition; sputter etching; thin films; PECVD; PVD; Raman spectra; Si; SiO₂; ion implantation; low-temperature silicon dioxide film deposition; photoluminescence; physical vapor deposition; plasma ashing; plasma doping; plasma enhanced chemical vapor deposition; plasma etch damage; plasma process; semiconductor device fabrication; semiconductor industry; silicon; sputtering; Etching; Films; Plasmas; Radio frequency; Silicon; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2013 13th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0578-2

Type

conf

DOI

10.1109/IWJT.2013.6644501

Filename

6644501