Gain-switched laser performance of diffusion-doped Cr/sup 2+/:ZnSe

Author

Podlipensky, A.V. ; Shcherbitsky, V.G. ; Kuleshov, N.V. ; Mikhailov, V.P. ; Levchenko, V.I. ; Yakimovich, V.N.

Author_Institution

Byelorussian State Polytech. Acad., Minsk, Byelorussia

fYear

1999

fDate

28-28 May 1999

Firstpage

551

Lastpage

552

Abstract

Summary form only given. The present article is dedicated to an investigation of laser performance of Cr/sup 2+/:ZnSe crystals produced by the diffusion doping method. The advantages of this method are high quality of the host crystals and the ability to control impurity doping level by adjustment of the diffusion time and temperature. A slope efficiency as high as 30% and laser threshold as low as 14 /spl mu/J with respect to absorbed pump energy are achieved for the best samples for which the round trip passive loss is estimated to be approximately 12%.

Keywords

chromium; diffusion; optical losses; optical pumping; semiconductor doping; semiconductor lasers; zinc compounds; 14 muJ; 30 percent; ZnSe:Cr; absorbed pump energy; diffusion doping method; diffusion temperature; diffusion time; diffusion-doped Cr/sup 2+/:ZnSe; gain-switched laser performance; impurity doping level control; laser threshold; round trip passive loss; slope efficiency; Absorption; Chromium; Crystals; Impurities; Laser excitation; Laser tuning; Optical materials; Pump lasers; Semiconductor lasers; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834581

Filename

834581