• DocumentCode
    1877969
  • Title

    Computational analysis of optical field enhancement in disordered nanoscale structures with applications to surface enhanced raman spectroscopy

  • Author

    Baczewski, A.D. ; Dault, D. ; Shanker, B. ; Hogan, T.P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
  • fYear
    2010
  • fDate
    11-17 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, the authors present a method for analyzing field enhancement in dense, disordered, semiconductor nanowire forests coated in noble metal nanoparticles using the volume integral equation. A hybrid fast solver employing the fast multipole method (FMM) and accelerated Cartesian expansions (ACE) is utilized to rapidly solve for fields in geometries which would otherwise be computationally unassailable. Using this code, nearfield maps can be generated, and comprehensive studies of field enhancement physics can be performed under a vast array of substrate conditions, and yield information that is otherwise experimentally unattainable. Preliminary field maps are presented to demonstrate the ability of our code to handle large, multiscale structures. At the conference, results will be presented exploring the influence of disorder, nanowire morphology, and material composition upon field enhancements.
  • Keywords
    II-VI semiconductors; Raman spectroscopy; integral equations; nanowires; plasmonics; polaritons; surface enhanced Raman scattering; surface plasmon resonance; zinc compounds; ZnO; accelerated Cartesian expansions; disordered nanoscale structure; disordered semiconductor nanowire; fast multipole method; hybrid fast solver; material composition; nanowire morphology; optical field enhancement; surface enhanced Raman spectroscopy; volume integral equation; Coatings; Geometry; Metals; Nanoparticles; Nanowires; Substrates; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE
  • Conference_Location
    Toronto, ON
  • ISSN
    1522-3965
  • Print_ISBN
    978-1-4244-4967-5
  • Type

    conf

  • DOI
    10.1109/APS.2010.5561274
  • Filename
    5561274