Title :
Highly reliable AlGaInAs buried heterostructure lasers for uncooled 10 Gb/s direct modulation
Author :
Ikoma, N. ; Kawahara, T. ; Kaida, N. ; Murata, M. ; Moto, A. ; Nakabayashi, T.
Author_Institution :
Transmission Devices R&D Labs., Sumitomo Electr. Industries Ltd., Yokohama, Japan
Abstract :
High reliability (estimated median lifetime of 240,000 hours) of 1.3 μm AlGaInAs buried heterostructure lasers has been demonstrated by more than 10,000 hours accelerated aging tests. Distributed-feedback lasers have successfully operated at 10 Gb/s at 95°C.
Keywords :
ageing; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; life testing; semiconductor device reliability; semiconductor lasers; 1.3 micron; 10 Gbit/s; 95 C; AlGaInAs; AlGaInAs buried heterostructure lasers; InP; InP substrate; accelerated aging tests; direct modulation; distributed-feedback lasers; indium phosphide substrate; Accelerated aging; High speed optical techniques; Laser stability; Life estimation; Lifetime estimation; Optical buffering; Oxidation; Semiconductor lasers; Testing; Threshold current;
Conference_Titel :
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
Print_ISBN :
1-55752-783-0
DOI :
10.1109/OFC.2005.193023
