Title :
Characterization of BF2, Ga and in dopants in Si for halo implantation
Author :
Matsunaga, Yusuke ; Binti Aid, Siti Rahmah ; Matsumoto, Shinichi ; Borland, John ; Tanjyo, Masayasu
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
Abstract :
Ion implantation with medium current implants has been applied for halo implantation. Indium (In) has been used for halo implantation for suppression of short channel effect [1]. Recently, the advantage of cryogenic ion implantation with medium current implanters has been reported [2]. They showed that the cryogenic BF2 implant improved the short channel rolloff characteristics.
Keywords :
barium compounds; elemental semiconductors; gallium; indium; ion implantation; silicon; Si:BF2; Si:Ga; Si:In; cryogenic ion implantation; dopant characterization; halo implantation; medium current implanters; short channel rolloff characteristics; Annealing; Current measurement; Electrical resistance measurement; Implants; Junctions; Resistance; Silicon;
Conference_Titel :
Junction Technology (IWJT), 2013 13th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0578-2
DOI :
10.1109/IWJT.2013.6644509
