Dependence of transmission on number of rows of 2-D macroporous silicon photonic band gap material

Author

Leonard, S.W. ; Busch, K. ; John, S. ; van Driel, H.M. ; Birner, A. ; Gosele, U.

Author_Institution

Dept. of Phys., Toronto Univ., Ont., Canada

fYear

1999

fDate

28-28 May 1999

Firstpage

556

Lastpage

557

Abstract

Summary form only given. Although it is well known that photonic band gap (PBG) materials can provide a high degree of attenuation within the photonic band gap, relatively little work has been done on visible or near-infrared gap materials to investigate exactly how this attenuation depends on the material thickness. This is an important issue because it is the attenuating property of photonic band gap materials that makes them so attractive as photonic circuit elements. We report on the band-gap transmission properties of a 2D silicon PBG materials as a function of material thickness and wavelength with transmissivity as low as 3/spl times/10/sup -4/ being observed for only 4 unit cell thickness.

Keywords

light transmission; optical materials; optical waveguides; photonic band gap; porous semiconductors; silicon; 2-D macroporous silicon photonic band gap material; 2D silicon PBG materials; Si; attenuation; band-gap transmission properties; material thickness; near-infrared gap materials; photonic band gap materials; photonic circuit elements; transmissivity; unit cell thickness; visible gap materials; Attenuation; Lattices; Nonlinear optics; Optical attenuators; Optical films; Optical materials; Optical waveguides; Photonic band gap; Silicon; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834589

Filename

834589