Title :
Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions
Author :
Current, Michael I. ; Yao-Jen Lee ; Yu-Lun Lu ; Ta-Chun Cho ; Tien-Sheng Chao ; Onoda, Hiroshi ; Sekar, K. ; Tokoro, Nobuhiro
Author_Institution :
Current Sci., San Jose, CA, USA
Abstract :
Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.
Keywords :
elemental semiconductors; ion implantation; microwave materials processing; organic compounds; phosphorus; rapid thermal annealing; silicon; C7 implanted strained nMOS S/D type junctions; RTA annealing; Si:P; microwave annealing; molecular carbon ions; phos-doped strained Si(100); phos-doped strained Si(110); rapid-thermal annealing; temperature 500 C; temperature 600 C to 1000 C; Annealing; Carbon; Implants; Ions; Junctions; Microwave transistors; Silicon; cluster carbon; microwave anneal; molecular carbon; phosphorous doping;
Conference_Titel :
Junction Technology (IWJT), 2013 13th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0578-2
DOI :
10.1109/IWJT.2013.6644511
