DocumentCode :
1878203
Title :
Integration of millisecond and spike anneals for dopant activation optimization
Author :
Shiyu Sun ; Sharma, Shantanu ; Rao, K.V. ; Ng, Bryan ; Kouzminov, D. ; Colombeau, B. ; Variam, N. ; Muthukrishnan, S. ; Mayur, A. ; Brand, A.
Author_Institution :
SSG CTO Office, Appl. Mater. Inc., Sunnyvale, CA, USA
fYear :
2013
fDate :
6-7 June 2013
Firstpage :
88
Lastpage :
90
Abstract :
The effects of anneal sequences (ms anneal followed by spike anneal vs. spike anneal followed by ms anneal) were explored. Substantial anneal sequence effects on dopant activation were also reported.
Keywords :
annealing; doping profiles; optimisation; secondary ion mass spectra; SIMS; dopant activation optimization; millisecond anneal; spike anneal; substantial anneal sequence effects; Annealing; Conferences; Implants; Junctions; Silicon; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology (IWJT), 2013 13th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0578-2
Type :
conf
DOI :
10.1109/IWJT.2013.6644512
Filename :
6644512
Link To Document :
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