• DocumentCode
    1878205
  • Title

    Semiconductor three-dimensional photonic crystals operating at infrared wavelength region

  • Author

    Noda, S. ; Yamamoto, N.

  • Author_Institution
    Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
  • fYear
    1999
  • fDate
    28-28 May 1999
  • Firstpage
    558
  • Lastpage
    559
  • Abstract
    Summary form only given. Recently, much attention has been paid to photonic crystals (PCs) for novel scientific and engineering applications such as the inhibition of spontaneous emission, threshold-less lasers, very compact optical circuits, and so on. The realization of complete photonic band gap and the introduction of the defect states are very important for such applications. However, there are very few reports on the complete three-dimensional (3D) PCs at optical wavelength region due to the difficulty of wavelength-order micro processes. In this work, we have developed complete 3D PCs with an asymmetric face-centered cubic (FCC) structure operating at infrared wavelength region (5/spl sim/10 /spl mu/m) and show that the considerable attenuation as large as 30 dB has been achieved for the first time.
  • Keywords
    photonic band gap; semiconductors; FCC structure; defect states; infrared wavelength region; light attenuation; photonic band gap; semiconductor three-dimensional photonic crystal; Etching; FCC; Gallium arsenide; Gratings; Laser beams; Laser fusion; Optical attenuators; Optical device fabrication; Personal communication networks; Photonic crystals;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-595-1
  • Type

    conf

  • DOI
    10.1109/CLEO.1999.834592
  • Filename
    834592