DocumentCode
1878205
Title
Semiconductor three-dimensional photonic crystals operating at infrared wavelength region
Author
Noda, S. ; Yamamoto, N.
Author_Institution
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
fYear
1999
fDate
28-28 May 1999
Firstpage
558
Lastpage
559
Abstract
Summary form only given. Recently, much attention has been paid to photonic crystals (PCs) for novel scientific and engineering applications such as the inhibition of spontaneous emission, threshold-less lasers, very compact optical circuits, and so on. The realization of complete photonic band gap and the introduction of the defect states are very important for such applications. However, there are very few reports on the complete three-dimensional (3D) PCs at optical wavelength region due to the difficulty of wavelength-order micro processes. In this work, we have developed complete 3D PCs with an asymmetric face-centered cubic (FCC) structure operating at infrared wavelength region (5/spl sim/10 /spl mu/m) and show that the considerable attenuation as large as 30 dB has been achieved for the first time.
Keywords
photonic band gap; semiconductors; FCC structure; defect states; infrared wavelength region; light attenuation; photonic band gap; semiconductor three-dimensional photonic crystal; Etching; FCC; Gallium arsenide; Gratings; Laser beams; Laser fusion; Optical attenuators; Optical device fabrication; Personal communication networks; Photonic crystals;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-595-1
Type
conf
DOI
10.1109/CLEO.1999.834592
Filename
834592
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