Evaluation of a SiC power module using low-on-resistance IEMOSFET and JBS for high power density power converters

In high-power density power converter designs, power losses of power devices are essential design parameters. Silicon-carbide (SiC) power devices are expected as next generation power devices due to their superior performances compared to conventional silicon (Si) power devices. The power loss performances of a SiC power module using SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) and Junction barrier controlled Schottky Diode (SiC-JBS) has been evaluated based on parameters of the junction temperature, current density, and switching frequency. The advantage of the SiC power module compared to a latest Si-IGBT and SiC-diode hybrid-pair module are discussed from the view point of the power loss reduction.