Title :
Progress and prospects of silicon transistors based on junction technologies
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Progress of silicon transistors will be described on junction technologies. Especially, advanced CMOS device and more than Moore technologies will be discussed for various applications.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; silicon; CMOS device; Moore technologies; Si; junction technologies; silicon transistors; CMOS integrated circuits; Field effect transistors; Junctions; Logic gates; Silicon; Very large scale integration; Advanced CMOS device; Communication device; Display device; Image sensor; Junction technologies; More-than-Moore device; Non-volatile memory; Packaging technology; Scaling; Silicon Transistor;
Conference_Titel :
Junction Technology (IWJT), 2013 13th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0578-2
DOI :
10.1109/IWJT.2013.6644515
