Title :
TiO2 thin film-based low concentration MIS hydrogen sensor
Author :
Shubham, K. ; Khan, R.U. ; Chakrabarti, P.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Abstract :
The present paper deals with a thin film based Pd/TiO2/n-Si MIS hydrogen sensor using Titanium Dioxide (TiO2) as an insulator. The TiO2 thin film has been deposited by using low temperature arc vapor deposition (LTAVD) technique. The gas sensing properties of the MIS structure were studied towards hydrogen (0.1-2 ppm in air) at room temperature and 50°C respectively. The response of the sensor was measured as shift in C-V curve of the MIS structure. The device exhibits better sensitivity to hydrogen at zero gate bias. High sensitivity of the sensor can be attributed to the change of interface state charges on exposure of gases along with the formation of dipole layer. The values of response time as well as the recovery time have also been estimated and found good compared to conventional MOS structure.
Keywords :
MIS devices; gas sensors; hydrogen; insulating thin films; palladium; silicon; thin film sensors; titanium compounds; C-V curve; H2; LTAVD technique; MIS structure; MOS structure; Pd-TiO2-Si; dipole layer formation; gas sensing properties; insulator; low temperature arc vapor deposition technique; temperature 50 degC; thin film-based low concentration MIS hydrogen sensor; zero gate bias; Hydrogen sensor; MIS structure; TiO2 thin film;
Conference_Titel :
Engineering (NUiCONE), 2012 Nirma University International Conference on
Conference_Location :
Ahmedabad
Print_ISBN :
978-1-4673-1720-7
DOI :
10.1109/NUICONE.2012.6493226
