DocumentCode :
1879257
Title :
Series connection of IGBT
Author :
Nguyen, The-Van ; Jeannin, Pierre-Olivier ; Vagnon, Eric ; Frey, David ; Crebier, Jean-Christophe
Author_Institution :
CNRS, Grenoble Electr. Eng. Lab., Grenoble, France
fYear :
2010
fDate :
21-25 Feb. 2010
Firstpage :
2238
Lastpage :
2244
Abstract :
This article analyzes the effects of parasitic capacitances in the series connection of IGBT, which exist naturally due to gate driver and power circuit geometry. Two solutions, that can be combined, are proposed to minimize these effects in order to achieve a better voltage balancing. The first one is based on gate driver self-powering technique. The second one is based on a vertical structure assembly of IGBT connected in series. The performance offered by these two complementary solutions is investigated and validated on a series connection of three IGBT in a chopper converter. Both simulation and experimental results show the effectiveness of our approaches.
Keywords :
choppers (circuits); convertors; insulated gate bipolar transistors; IGBT; chopper converter; gate driver self-powering technique; power circuit geometry; series connection; Assembly; Choppers; Driver circuits; Geometry; Insulated gate bipolar transistors; Laboratories; Parasitic capacitance; Switches; Transformers; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
Conference_Location :
Palm Springs, CA
ISSN :
1048-2334
Print_ISBN :
978-1-4244-4782-4
Electronic_ISBN :
1048-2334
Type :
conf
DOI :
10.1109/APEC.2010.5433548
Filename :
5433548
Link To Document :
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