Series connection of IGBT

Author

Nguyen, The-Van ; Jeannin, Pierre-Olivier ; Vagnon, Eric ; Frey, David ; Crebier, Jean-Christophe

Author_Institution

CNRS, Grenoble Electr. Eng. Lab., Grenoble, France

fYear

2010

fDate

21-25 Feb. 2010

Firstpage

2238

Lastpage

2244

Abstract

This article analyzes the effects of parasitic capacitances in the series connection of IGBT, which exist naturally due to gate driver and power circuit geometry. Two solutions, that can be combined, are proposed to minimize these effects in order to achieve a better voltage balancing. The first one is based on gate driver self-powering technique. The second one is based on a vertical structure assembly of IGBT connected in series. The performance offered by these two complementary solutions is investigated and validated on a series connection of three IGBT in a chopper converter. Both simulation and experimental results show the effectiveness of our approaches.

Keywords

choppers (circuits); convertors; insulated gate bipolar transistors; IGBT; chopper converter; gate driver self-powering technique; power circuit geometry; series connection; Assembly; Choppers; Driver circuits; Geometry; Insulated gate bipolar transistors; Laboratories; Parasitic capacitance; Switches; Transformers; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE

Conference_Location

Palm Springs, CA

ISSN

1048-2334

Print_ISBN

978-1-4244-4782-4

Electronic_ISBN

1048-2334

Type

conf

DOI

10.1109/APEC.2010.5433548

Filename

5433548