• DocumentCode
    1879733
  • Title

    InP HEMT and HBT applications beyond 200 GHz

  • Author

    Streit, Dwight ; Lai, Richard ; Oki, Aaron ; Gutierrez-Aitken, Augusto

  • Author_Institution
    TRW Space & Electron., Velocium, El Segundo, CA, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    11
  • Lastpage
    14
  • Abstract
    InP HEMT and InP HBT offer significant performance advantages for applications that range from microwave and millimeter-wave to fast digital and optoelectronic circuits. The improved transport characteristics, high transconductance, and optical integration properties of these devices hold great benefit for wireless and fiber-optic communications, radar, passive imaging and radiometer systems. We present an overview of recent results for InP devices and integrated circuits, including the current status of TRW´s InP HEMT and HBT device and MMIC performance. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; bipolar MIMIC; bipolar MMIC; digital integrated circuits; field effect MIMIC; field effect MMIC; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit technology; integrated optoelectronics; millimetre wave bipolar transistors; millimetre wave field effect transistors; millimetre wave imaging; power integrated circuits; radiometers; 200 GHz; EHF; InP; InP HBT applications; InP HEMT applications; MM-wave MMIC performance; MM-wave operation; TRW; discrete devices; fast digital circuits; integrated circuits; optoelectronic circuits; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Laser radar; Microwave circuits; Microwave devices; Millimeter wave integrated circuits; Millimeter wave radar; Millimeter wave technology; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-7320-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2002.1014077
  • Filename
    1014077