GaInNAs/GaAs based long-wavelength edge emitters and VCSELs

This paper first reports the status of GaInNAs-based edge emitting lasers emitting around 1300 nm. After initial progress in reducing laser thresholds has apparently reached a standstill, the main issues of present research activities are: clarifying the effect of thermal annealing on GaInNAs layers, determining the dominant recombination mechanisms in GaInNAs lasers and efforts to reach laser emission at longer wavelengths. Secondly, VCSELs in this material system are presented which meanwhile demonstrate output powers around 1 mW in CW single mode operation at wavelengths up to 1305 nm. Demonstrated data transmission at 10 Gbit/s indicate that these devices may rapidly find their way into next generation data transmission systems.