Title :
Variational study of the metal-insulator transition in polyacetylene
Author :
Jeckelmann, E. ; Baeriswyl, D.
Author_Institution :
Universite´ de Fribourg
Abstract :
Summary form only given, as follows. The one-dimensional Peierls-Hubbard model is shown to describe in a natural way the metal-insulator transition observed in polyacetylene as a function of doping [l]. A single set of parameters is able to account for the insulating state at half-filling (dimerization, optical gap), charged solitons close to half filling and a transition to a state with vanishing gap at a doping concentration of about 8%. For higher doping the system is a strongly correlated metal, which is particularly sensitive to the effects of impurities and interchain coupling.
Keywords :
Doping; Filling; Impurities; Insulation; Metal-insulator structures; Optical sensors; Optical solitons; Semiconductor process modeling;
Conference_Titel :
Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
Conference_Location :
Seoul, Korea
DOI :
10.1109/STSM.1994.834665