Ultra-Low Voltage MEMS Resonator Based on RSG-MOSFET

Author

Abelé, N. ; Séguéni, K. ; Boucart, K. ; Casset, F. ; Legrand, B. ; Buchaillot, L. ; Ancey, P. ; Ionescu, A.M.

Author_Institution

Electronics laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, SWITZERLAND; ST Microelectronics, Crolles, FRANCE

fYear

2006

fDate

22-26 Jan. 2006

Firstpage

882

Lastpage

885

Abstract

16MHz and 91MHz micromechanical resonators based on the Resonant Suspended-gate MOSFET (RSG-MOSFET) architecture are demonstrated. A fabrication process using a polysilicon sacrificial layer and an aluminum-silicon alloy (AlSi 1%) suspended-gate was developed. Static and dynamic electrical characteristics of the Clamped-Clamped beam (CC-beam) resonator have been investigated in order to explain the device behavior. The lowest reported actuation voltage for a MEMS resonator, less than 1V, makes the resonator compatible with standard CMOS voltages. The actuation voltage dependence on the MOSFET characteristics and the threshold voltage is explained. A resonant frequency tuning of 750kHz was achieved by a 240mV DC voltage variation, and a quality factor of Q= 641 was calculated from measurements in vacuum.

Keywords

Aluminum alloys; Electric variables; Fabrication; MOSFET circuits; Micromechanical devices; Q factor; Resonance; Resonant frequency; Threshold voltage; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on

Conference_Location

Istanbul, Turkey

ISSN

1084-6999

Print_ISBN

0-7803-9475-5

Type

conf

DOI

10.1109/MEMSYS.2006.1627941

Filename

1627941