Title :
High-quality 1.3 μm AlGaInAs MQW by narrow-stripe selective metalorganic vapor-phased epitaxy and its application in buried heterostructure laser diodes
Author :
Nakamura, T. ; Ohsawa, Y. ; Okuda, T. ; Tsuruoka, K. ; Kurihara, K. ; Terakado, T. ; Koui, T. ; Kobayashi, K.
Author_Institution :
Photonic & Wireless Device Res. Labs., NEC Corp., Shiga, Japan
Abstract :
High-quality 1.3 μm AlGaInAs MQW by narrow-stripe selective MOVPE has been investigated and then applied to an AlGaInAs BH laser diode by using an Al-oxidation-free process. A low threshold current of 9.0 mA and a relaxation frequency of more than 10 GHz were obtained at 85°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; optical fabrication; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 1.3 micron; 10 GHz; 85 degC; 9 mA; Al-oxidation-free process; AlGaInAs; BH laser diode; PL spectra; buried heterostructure LDs; high-quality MQW; low threshold current; metalorganic vapor-phased epitaxy; narrow-stripe selective MOVPE; relaxation frequency; Diode lasers; Epitaxial growth; Epitaxial layers; Frequency; Optical materials; Quantum well devices; Substrates; Temperature dependence; Temperature distribution; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014089
