• DocumentCode
    1880094
  • Title

    High speed (207 GHz fτ), low thermal resistance, high current density metamorphic InP/InGaAs/InP DHBTs grown on a GaAs substrate

  • Author

    Kim, Y.M. ; Dahlstrom, M. ; Lee, S. ; Wei, Y. ; Rodwell, M.J.W. ; Gossard, A.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    39
  • Lastpage
    41
  • Abstract
    InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. InP layer was employed as a metamorphic buffer layer because of its high thermal conductivity. A 140 GHz power-gain cutoff frequency fmax and a 207 GHz current-gain cutoff frequency fτ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was 6 V while the DC current gain β was 76.
  • Keywords
    current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device reliability; thermal conductivity; thermal resistance; 140 GHz; 207 GHz; 6 V; DHBTs; GaAs; GaAs substrates; InP-In0.53Ga0.47As-InP-GaAs; InP/In0.53Ga0.47As/InP; breakdown voltage; current density; current-gain cutoff frequency; metamorphic buffer layer; power-gain cutoff frequency; thermal conductivity; thermal resistance; Buffer layers; Current density; Current measurement; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Substrates; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-7320-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2002.1014092
  • Filename
    1014092
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1880094