DocumentCode
1880111
Title
3 GHz resonant tunneling clocked comparator
Author
Brar, B. ; Broekaert, T.P.E. ; van der Wagt, J.P.A. ; Seabaugh, A.C. ; Moise, T.S. ; Morris, F.J. ; Beam, E.A., III ; Frazie, G.A.
Author_Institution
Raytheon TI Syst., Dallas, TX, USA
fYear
1997
fDate
4-6 Aug 1997
Firstpage
28
Lastpage
34
Abstract
The combination of resonant tunneling diodes (RTDs) and heterostructure field-effect transistors (HFETs) provides a versatile technology for designing ultra-high-speed analog and digital circuits. Here we demonstrate an RTD-HFET comparator circuit that operates up to 3 GHz clock frequency. The RTD based comparator allows us to employ 75% fewer devices than all-transistor comparators. The circuit is measured to have a single-tone spur-free-dynamic range of at least 40 dB and a sensitivity of 5 mV at a 2 GHz clock
Keywords
JFET circuits; comparators (circuits); resonant tunnelling diodes; 3 GHz; RTD-HFET clocked comparator circuit; heterostructure field-effect transistor; resonant tunneling diode; sensitivity; single-tone spur-free-dynamic range; ultra-high-speed circuit; Comparators;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location
Ithaca, NY
ISSN
1079-4700
Print_ISBN
0-7803-3970-3
Type
conf
DOI
10.1109/CORNEL.1997.649339
Filename
649339
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