DocumentCode :
1880140
Title :
90 GHz operation of a novel dynamic frequency divider using InP/InGaAs HBTs
Author :
Tsunashima, Satoshi ; Nakajima, Hiroki ; Sano, Eiichi ; Ida, Minoru ; Kurishima, Kenji ; Watanabe, Noriyuki ; Enoki, Takatomo ; Sugahara, Hirohiko
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fYear :
2002
fDate :
2002
Firstpage :
43
Lastpage :
46
Abstract :
We present 90 GHz operation of a 1/8 digital frequency divider IC fabricated with InP/InGaAs HBTs having a current gain cutoff frequency (fτ) of over 150 GHz and a maximum oscillation frequency (fmax) of over 200 GHz. To our knowledge, this toggle frequency is the highest ever reported for digital frequency dividers. A novel dynamic toggle flip-flop (T-FF) was employed in order to achieve ultrafast operation.
Keywords :
III-V semiconductors; bipolar digital integrated circuits; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; 150 GHz; 200 GHz; 90 GHz; HBTs; InP-InGaAs; InP/InGaAs; current gain cutoff frequency; digital frequency dividers; dynamic frequency divider; dynamic toggle flip-flop; maximum oscillation frequency; toggle frequency; ultrafast operation; Current density; Cutoff frequency; Digital integrated circuits; Flip-flops; Frequency conversion; Heterojunction bipolar transistors; High speed integrated circuits; Indium gallium arsenide; Indium phosphide; Optical frequency conversion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014094
Filename :
1014094
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1880140
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