90 GHz operation of a novel dynamic frequency divider using InP/InGaAs HBTs

Author

Tsunashima, Satoshi ; Nakajima, Hiroki ; Sano, Eiichi ; Ida, Minoru ; Kurishima, Kenji ; Watanabe, Noriyuki ; Enoki, Takatomo ; Sugahara, Hirohiko

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi, Japan

fYear

2002

fDate

2002

Firstpage

43

Lastpage

46

Abstract

We present 90 GHz operation of a 1/8 digital frequency divider IC fabricated with InP/InGaAs HBTs having a current gain cutoff frequency (f_τ) of over 150 GHz and a maximum oscillation frequency (f_max) of over 200 GHz. To our knowledge, this toggle frequency is the highest ever reported for digital frequency dividers. A novel dynamic toggle flip-flop (T-FF) was employed in order to achieve ultrafast operation.

Keywords

III-V semiconductors; bipolar digital integrated circuits; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; 150 GHz; 200 GHz; 90 GHz; HBTs; InP-InGaAs; InP/InGaAs; current gain cutoff frequency; digital frequency dividers; dynamic frequency divider; dynamic toggle flip-flop; maximum oscillation frequency; toggle frequency; ultrafast operation; Current density; Cutoff frequency; Digital integrated circuits; Flip-flops; Frequency conversion; Heterojunction bipolar transistors; High speed integrated circuits; Indium gallium arsenide; Indium phosphide; Optical frequency conversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014094

Filename

1014094