Laser-induced photoluminescence in polyacetylene

Summary form only given. With cis-(CH)x films at 300K implantation fluences of 5x10/sup 13/ -5x10/sup 14/ erbium ions/cm/sup 2/ at an ion flux of 0.2 micro A/cm/sup 2/ and a beam energy of 8OKev were used. We found the strong luminescence peaked at 1.34ev(excitation line 6328/spl Aring/) and 1.38ev(excitation line 5145/spl Aring/) near the interband absorption edge. We showed the effect of ion-implanted Er/sup 3+/ on luminescence at room temperature. There is the relatively broad photoluminescence band peaked at 2.19ev and the multiple overtone Raman structure from cis-(CH)x obtained at 300K using 5145/spl Aring/ laser line excitation. The characteristics of Er/sup 3+/ luminescence around 2.20ev appear. We have estimated the time of intersoliton hopping in lightly erbium-doped (CH)x on the basis of phonon-assisted intersoliton hopping mechanism. This hopping time has the order of 10/sup -13/ - 10/sup -14/ sec at least. The results indicate that the assistance from the vibrational motion of the dopant along the axis between two (CH)x chains can decrease the intersoliton hopping time.