Title :
High current (100 mA) InP/InGaAs/InP DHBTs with 330 GHz fmax
Author :
Wei, Yun ; Lee, Sangmin ; Sundararajan, P.K. ; Dahlstrom, Mattias ; Urteaga, Miguel ; Rodwell, Mark
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report high fmax and high current InP/InGaAs/InP DHBT in transferred-substrate technology. The common base device with equivalent emitter size of 128 μm2 exhibits fmax of 330 GHz at a current of 100 mA. The common emitter device with emitter area of 64 μm2 shows fmax of 371 GHz when biased at 57 mA. The breakdown voltage of these DHBTs is up to 7 V at low current density. All the devices are realized in multi-finger structure that was deliberately designed to improve the thermal stability at high power operation and to reduce the parasitics. To our knowledge, this is the highest fmax for a DHBT biased at such high current.
Keywords :
III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device reliability; thermal resistance; thermal stability; 100 mA; 330 GHz; 371 GHz; 57 mA; 7 V; DHBTs; InP-InGaAs-InP; InP/InGaAs/InP; breakdown voltage; common base device; common emitter device; current density; emitter area; equivalent emitter size; high power operation; multi-finger structure; parasitics; thermal stability; transferred-substrate technology; Current density; Double heterojunction bipolar transistors; Electrical resistance measurement; Fingers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Proximity effect; Thermal resistance; Thermal stability;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014097
