DocumentCode
1880215
Title
Integrated switched-capacitor voltage doubler with clock transition periods boosting and transfer blocking techniques
Author
Ngo, Phong ; Ma, Dongsheng
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Arizona, Tucson, AZ, USA
fYear
2010
fDate
21-25 Feb. 2010
Firstpage
813
Lastpage
817
Abstract
In this paper, a CMOS switched-capacitor voltage doubler is proposed. It employs the techniques of clock synchronization and charge transfer blocking to minimize the reversion loss. The clock transition period detection and boosting circuit modules allow continuous charge action to the output node, which significantly improves operation performances. The proposed voltage doubler was designed using IBM 180 nm CMOS process, with a 1.2 V supply voltage. Under no-load condition, it achieves 99.92% of ideal voltage level with 8 mV voltage ripple, while consuming only 9.6 ¿W of quiescent power. With a load ranging from 20 k¿ to 200 k¿, the up-conversion ratio performs 45% better than the prior arts.
Keywords
CMOS integrated circuits; capacitor switching; power convertors; synchronisation; CMOS switched-capacitor voltage doubler; boosting circuit; charge transfer blocking; clock synchronization; clock transition period boosting; integrated switched-capacitor voltage doubler; power 9.6 muW; quiescent power; resistance 20 kohm to 200 kohm; reversion loss minimization; size 180 nm; transfer blocking techniques; up-conversion ratio; voltage 1.2 V; voltage 8 mV; Boosting; Capacitors; Charge pumps; Charge transfer; Clocks; Power supplies; Switching converters; Threshold voltage; Timing; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
Conference_Location
Palm Springs, CA
ISSN
1048-2334
Print_ISBN
978-1-4244-4782-4
Electronic_ISBN
1048-2334
Type
conf
DOI
10.1109/APEC.2010.5433576
Filename
5433576
Link To Document