Title :
Si and InP integration in the HELIOS project
Author :
Fedeli, Jean-Marc
Author_Institution :
CEA-Leti, Minatec, Grenoble, France
Abstract :
Photonics and Electronics integration is considered using molecular wafer bonding of an optical SOI processed wafer on top of an electronics wafer. InP sources and Ge photodetectors are processed together on 200 mm wafers.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; germanium; indium compounds; integrated optoelectronics; photodetectors; silicon-on-insulator; wafer bonding; CMOS photonics; InP-Si-Ge-SiO2; SOI; electronics wafer; molecular wafer bonding; optical wafer; photodetectors; CMOS technology; Consumer electronics; III-V semiconductor materials; Indium phosphide; Optical device fabrication; Optical sensors; Optical waveguides; Photonics; Silicon; Wafer bonding;
Conference_Titel :
Optical Communication, 2009. ECOC '09. 35th European Conference on
Conference_Location :
Vienna
Print_ISBN :
978-1-4244-5096-1
