Title :
Thermal resistance characterization of 200 GHz Ft InGaAs/InAlAs HBTs
Author :
Fields, C.H. ; Foschaar, J. ; Thomas, S.
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
We present the results of measurements of the thermal resistivity of InP-based HBTs with cutoff frequencies, ft ∼200 GHz and with fmax over 300 GHz. The measurements were on full-thickness 3" InP wafers at Tamb from 30 - 210°C and three separate emitter current densities. We present data on three device sizes and two device layouts and discuss the relationship of Vbe to temperature at these elevated power and temperature levels.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device measurement; thermal resistance; 200 GHz; 3 in; 30 to 210 degC; InGaAs-InAlAs; InGaAs/InAlAs HBTs; device layouts; device sizes; elevated power levels; elevated temperature levels; emitter current densities; full-thickness InP wafers; thermal resistance characterization; thermal resistivity; Conductivity; Current density; Current measurement; Cutoff frequency; Density measurement; Electrical resistance measurement; Frequency measurement; Indium phosphide; Temperature; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014116
