Characterization and measurement of non-linear temperature rise and thermal resistance in InP heterojunction bipolar transistors

Author

Grossman, P. Chris ; Gutierrez-Aitken, Augusto ; Kaneshiro, Eric ; Sawdai, Donald ; Sato, Kenneth

Author_Institution

Microelectron. Processes & Products, TRW Space & Electron., Redondo Beach, CA, USA

fYear

2002

fDate

2002

Firstpage

83

Lastpage

86

Abstract

We present a method of measurement and characterization of the differential thermal resistance and non-linear temperature rise for small GaAs and InP heterojunction bipolar transistors. It is shown that nonlinear thermal behavior of the transistor can be completely described by the zero power thermal resistance and linear temperature coefficient, and that for small devices the zero power thermal resistance approximately scales with emitter area and that this scaling is more favorable for InP HBTs when compared to GaAs HBTs.

Keywords

III-V semiconductors; current density; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; temperature measurement; thermal analysis; thermal resistance measurement; GaAs; GaAs HBTs; InP; InP HBTs; characterization method; differential thermal resistance; heterojunction bipolar transistors; linear temperature coefficient; measurement method; nonlinear temperature rise; nonlinear thermal behavior; zero power thermal resistance; Current density; Current measurement; Density measurement; Electrical resistance measurement; Extraterrestrial measurements; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Temperature measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014117

Filename

1014117