Quantitative X-ray analysis of high performance InP/(InGa)As:C HBT for rapid non-destructive material qualification

Author

Velling, P. ; Keiper, D. ; Brennemann, A. ; Agethen, M. ; Janssen, G. ; Bushehri, E. ; Bertenburg, R.M.

Author_Institution

IPAG - Innovative Process. AG, Duisburg, Germany

fYear

2002

fDate

2002

Firstpage

87

Lastpage

90

Abstract

Carbon doped InP/(InGa)As Heterostructure Bipolar Transistors (HBT) are of interest for today´s (OC-768) and tomorrow´s (OC-3072, 100 Gbit Ethernet, UMTS) communication standards. For a reliable fabrication of these complex radio frequency (opto-)electronic circuits, a quantitative InP process technology control is necessary starting at the level of device epi-layer stacks. In this paper the quantitative characterization of an InP/(InGa)As:C HBT is carried out by non-destructive X-ray analysis. Based on X-ray measurements in 004- and 002-reflection, a detailed analysis of complex device layer stacks is purposed. As a result, an automatic calculation of layer parameters, e.g. thickness and composition is possible, reducing the turnaround time for statistical process control (SPC).

Keywords

III-V semiconductors; X-ray applications; X-ray diffraction; carbon; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor epitaxial layers; C doped InP/InGaAs HBT; InP-InGaAs:C; InP/InGaAs:C HBT; LP-MOVPE growth process; SPC; device epi-layer stacks; layer composition; layer parameters; layer thickness; nondestructive X-ray analysis; quantitative InP process technology control; quantitative characterization; rapid nondestructive material qualification; reliable fabrication; statistical process control; 3G mobile communication; Bipolar transistors; Communication standards; Ethernet networks; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Performance analysis; Process control; Qualifications;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014120

Filename

1014120