Contact potential imaging of cleaved mirror surface of 1.3 μm buried heterostructure laser diodes by Kelvin probe force microscopy

Author

Mizutani, Takashi ; Kato, Kenji ; Yamagata, Tetsuji ; Kishimoto, Sigeru ; Yamamoto, Norio ; Kondo, Yasuhiro

Author_Institution

Dept. of Quantum Eng., Nagoya Univ., Japan

fYear

2002

fDate

2002

Firstpage

95

Lastpage

98

Abstract

We have successfully obtained the contact potential images of cleaved mirror surface of 1.3 μm buried heterostructure laser diodes by Kelvin probe force microscopy. Embedded current blocking layer and mesa-etched active region were clearly recognized. A potential dip was observed at the regrowth interface. Carrier accumulation in the MQW active layer was pointed out.

Keywords

contact potential; laser cavity resonators; laser transitions; quantum well lasers; scanning probe microscopy; semiconductor device measurement; 1.3 micron; BH LD; Kelvin probe force microscopy; MQW active layer; buried heterostructure laser diodes; carrier accumulation; cleaved mirror surface; contact potential imaging; embedded current blocking layer; mesa-etched active region; potential dip; regrowth interface; semiconductor lasers; Atomic force microscopy; Electrostatic measurements; Force measurement; Kelvin; Mirrors; Probes; Quantum well devices; Surface emitting lasers; Surface topography; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014127

Filename

1014127