Title :
Challenges of Si photonics for on-chip integration
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
To clear fundamental limits of electrical interconnection, WDM optical interconnection should be implemented in Si photonics. Challenging issues are strongly connected with temperatures in CMOS processing and in operation. We will report a solution of Ge backend processing and a proposal to avoid temperature fluctuation of light wavelengths.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated optoelectronics; optical interconnections; p-i-n diodes; photodetectors; photodiodes; silicon; wavelength division multiplexing; CMOS; Ge; Si; WDM; backend processing; electrical interconnection; light wavelength temperature fluctuation; optical interconnection; photodetector; photodiode; photonics; pin diodes; wavelength division multiplexing; Annealing; CMOS process; Diodes; Fluctuations; Lattices; Photodetectors; Photodiodes; Photonics; Temperature; Wavelength division multiplexing;
Conference_Titel :
Optical Communication, 2009. ECOC '09. 35th European Conference on
Conference_Location :
Vienna
Print_ISBN :
978-1-4244-5096-1
