Two- and three-sectional laterally coupled DBR laser fabricated by focused ion beam lithography

Author

Bach, L. ; Wolf, A. ; Reithmaier, J.P. ; Forchel, A. ; Gentner, J.L. ; Goldstein, L.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

fYear

2002

fDate

2002

Firstpage

103

Lastpage

106

Abstract

By using focused ion beam lithography, high performance 1.55 μm emitting distributed Bragg reflector lasers were realized suitable for high speed optical telecommunication. Threshold currents of 8 mA and continuous wave efficiencies of 0.37 W/A for 600 μm long devices were achieved. Stable single mode emission with side mode suppression ratios of > 40 dB were observed for the entire operation range. By using 3-sectional DBR-lasers, we could increase the output power of the lasers up to 68 mW. Also we achieved a higher single mode yield with side mode suppression ratios of more than 60 dB and a higher thermal stability.

Keywords

distributed feedback lasers; focused ion beam technology; ion beam lithography; laser modes; laser stability; laser transitions; optical communication equipment; optical fabrication; quantum well lasers; thermal stability; 1.55 micron; 600 micron; 68 mW; FIB lithography; InGaAsP-InP; MQW laser structure; distributed Bragg reflector lasers; focused ion beam lithography; high speed optical telecommunication; laterally coupled DBR lasers; semiconductor lasers; side mode suppression; stable single mode emission; thermal stability; three-sectional DBR laser; two-sectional DBR lasers; Distributed Bragg reflectors; High speed optical techniques; Ion beams; Laser modes; Lithography; Optical coupling; Particle beam optics; Power generation; Stimulated emission; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014132

Filename

1014132