Title :
Low threshold operation of membrane buried heterostructure distributed feedback laser
Author :
Okamoto, T. ; Nunoya, N. ; Onodera, Y. ; Tamura, S. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
Low threshold and single mode operation of 1.55 μm-wavelength GaInAsP/InP membrane buried heterostructure distributed feedback (BH-DFB) lasers consisting of deeply etched single-quantum-well wire-like active regions was demonstrated under room temperature CW optical pumping. A threshold pump power of 4.8 mW and a sub-mode suppression ratio (SMSR) of 39 dB were obtained for a 142 nm thick membrane with a cavity length of 120 μm and a stripe width of 2 μm. The corresponding threshold for current injection was roughly estimated to be 88 μA. The stop-band width was also observed to be 37 nm and an index-coupling coefficient of the grating structure was estimated to be 1140 cm-1.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; optical pumping; quantum well lasers; 1.55 micron; 120 micron; 142 nm; 2 micron; 4.8 mW; 88 muA; GaInAsP-InP; GaInAsP/InP; cavity length; current injection; deeply etched single-quantum-well wire-like active regions; distributed feedback laser; grating structure; index-coupling coefficient; low threshold operation; membrane buried heterostructure; room temperature CW optical pumping; single mode operation; stop-band width; stripe width; sub-mode suppression ratio; threshold pump power; Biomembranes; Distributed feedback devices; Etching; Gratings; Indium phosphide; Laser feedback; Laser modes; Optical pumping; Pump lasers; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014140