Title :
High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure
Author :
Liang, J.-H. ; Maruyama, T. ; Ogawa, Y. ; Kobayashi, S. ; Sonoda, J. ; Urae, H. ; Tomita, S. ; Tomioka, Y. ; Kon, S. ; Nakano, Y.
Author_Institution :
R&D Center, Stanley Electr. Corp., Kanagawa, Japan
Abstract :
In order to improve the L-I characteristics of conventional SLDs, a new ridge waveguide structure has been proposed and fabricated. As results, considerably improved light emission threshold characteristics (Ith∼30mA), a COD (catastrophic optical damage) level limited output power with high slope efficiency ∼0.6W/A, and fairly improved output linearity have been obtained on the J-shaped ridge waveguide SLD by using aluminum-free materials (InGaAs/InGaAsP/InGaP).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; ridge waveguides; superluminescent diodes; 30 mA; COD; InGaAs-InGaAsP-InGaP; InGaAs/InGaAsP/InGaP; J-shaped ridge waveguide; L-I characteristics; SLDs; catastrophic optical damage; light emission threshold characteristics; limited output power; output linearity; slope efficiency; superluminescent diodes; Optical feedback; Optical fiber communication; Optical materials; Optical noise; Optical sensors; Optical waveguides; Power generation; Reflectivity; Stimulated emission; Superluminescent diodes;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014143
